SG4953S -30v dual p-channel power mosfet ds-SG4953S-04 page: 1 silicongear corporation www. silicongear.com sop-8 v dss , -30v r ds(on) , 60m ? (max.) @ v gs =-10v r ds(on) , 90m ? (max.) @ v gs =-4.5v i d , -5a description features ? low on-resistance ? low input capacitance ? low miller charge ? low input/output leakage applications the SG4953S is the highest performance trench p-ch mosfets with extreme high cell density, which provide excellent rdson and gate charge for most of the synchronous buck converter applications. the SG4953S meet the rohs and green product requirement, 100% eas guaranteed with full f unction reliability approved. ? motor / body load control ? automotive systems ? load switch ? dc-dc converters and off-line ups ordering information ordering code rohs status package package code packing quantity SG4953S halogen-free sop-8 s tape & reel 2,500 absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v t c =25c -5 a drain current-continuous t c =70c i d -3.9 a drain current-pulsed note 1 i dm -20 a t a =25c -4.2 a drain current-continuous t a =70c i d -3.3 a avalanche current, l=0.1mh i as -15 a avalanche energy, l=0.1mh e as 11.25 mj t c =25c 2.1 w t c =70c 1.3 w t a =25c 1.5 w maximum power dissipation t a =70c p d 0.9 w storage temperature range t stg -55 to +150 c operating junction temperature range t j -55 to +150 c thermal resistance ratings parameter symbol conditions min. typ. max. unit maximum junction-to-ambient note 2 r ja steady state - - 85 c/w maximum junction-to-case note 2 r jc steady state - - 60 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
SG4953S -30v dual p-channel power mosfet ds-SG4953S-04 page: 2 silicongear corporation www. silicongear.com electrical characteristics (t j =25c unless otherwise noted) off characteristics parameter symbol conditions min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i ds =-250 a -30 - - v zero gate voltage drain current i dss v ds =-24v, v gs =0v - - -1 a gate-body leakage i gss v gs =20v, v ds =0v - - 100 na on characteristics parameter symbol conditions min. typ. max. unit gate threshold voltage v gs(th) v ds =v gs , i ds =-250 a -1 - -3 v v gs =-10v, i ds =-5a - 45 60 drain-source on-state resistance r ds(on) v gs =-4.5v, i ds =-4a - 66 90 m ? dynamic characteristics parameter symbol conditions min. typ. max. unit input capacitance c iss - 680 - output capacitance c oss - 290 - reverse transfer capacitance c rss v ds =-15v, v gs =0v, f=1mhz - 120 - pf switching characteristics parameter symbol conditions min. typ. max. unit turn-on delay time t d(on) - 10 - rise time t r - 17 - turn-off delay time t d(off) - 22 - fall time t f v dd =-15v, v gs =-10v, r g =3.3 ? , i d =-5a - 21 - ns total gate charge at -4.5v q g - 6.5 - gate to source gate charge q gs - 2.8 - gate to drain ?miller? charge q gd v ds =-15v, v gs =-4.5v, i d =-5a - 3 - nc drain-source diode characteristics and maximum ratings parameter symbol conditions min. typ. max. unit drain-source diode forward voltage v sd v gs =0v, i s =-5a - - -1.3 v body diode reverse recovery time t rr - 12 - ns body diode reverse recovery charge q rr i f =-5a, dl/dt=100a/ s - 3.5 - nc notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. r ja shown below for single device operation on fr-4 in still air. www.datasheet.net/ datasheet pdf - http://www..co.kr/
SG4953S -30v dual p-channel power mosfet ds-SG4953S-04 page: 3 silicongear corporation www. silicongear.com typical operating characteristics output characteristics gate threshold voltage 0246810 0 2 4 6 8 10 12 14 16 18 20 -4v v ds - drain-source voltage (v) i d - drain current (a) -3v v gs = -5,-7,-10v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j - junction temperature (c) normalized threshold voltage i ds = -250 a gate-source on resistance drain-source on resistance 345678910 40 60 80 100 120 140 v gs - gate-source voltage (v) r ds(on) - on resistance (m ? ) i ds =-5a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j - junction temperature (c) normalized o n resistance v gs = -10v i ds = -5a r ds(on) = 45m @ t j =25 o c drain-source on resistance source-drain diode forward 024681012 30 40 50 60 70 80 i d - drain current (a) r ds(on) - o n r es i stance ( m ? ) v gs = -10v v gs = -4.5v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 v sd - source - drain voltage (v) i s - source current (a) t j =150 o c t j =25 o c www.datasheet.net/ datasheet pdf - http://www..co.kr/
SG4953S -30v dual p-channel power mosfet ds-SG4953S-04 page: 4 silicongear corporation www. silicongear.com typical operating characteristics (cont.) power dissipation drain current 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 t j - junction temperature (c) p tot - power (w) t c =25 o c 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 t j - junction temperature (c) i d - drain current (a) t c =25 o c v g =-10v safe operation area transient thermal impedance 0.01 0.1 1 10 100 0.01 0.1 1 10 30 v ds - drain-source voltage (v) i d - drain c urrent ( a ) 300us r d s ( o n ) l i m i t 1s t c =25 o c 10ms 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 square wave pulse duration (sec) normalized transient thermal resistance mounted on 1in 2 pad r ja : 85 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 capacitance gate charge 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - drain-source voltage (v) c - capacitance (pf) frequency=1mhz crss coss ciss 01234567 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 q g - gate charge (nc) v gs - gate-source voltage (v) v ds = -15v i ds = -5a www.datasheet.net/ datasheet pdf - http://www..co.kr/
SG4953S -30v dual p-channel power mosfet ds-SG4953S-04 page: 5 silicongear corporation www. silicongear.com sop-8 dimensions sop-8 dimensions millimeters inches symbols min. typ. max. min. typ. max. a 1.35 1.55 1.753 0.053 0.061 0.069 a1 0.10 0.15 0.25 0.004 0.006 0.010 a2 1.27 1.52 1.626 0.050 0.060 0.064 a3 - 0.254 - - 0.010 - b 0.30 0.40 0.51 0.012 0.016 0.020 d 4.70 4.90 5.10 0.185 0.193 0.201 d1 4.70 4.90 5.00 0.185 0.193 0.197 d2 4.80 4.90 5.00 0.189 0.193 0.197 e 5.79 6.00 6.20 0.228 0.236 0.244 e1 3.75 3.90 4.00 0.148 0.154 0.157 e2 3.75 3.90 4.00 0.148 0.154 0.157 h 0.17 0.21 0.25 0.007 0.008 0.010 e - 1.27 - - 0.050 - l 0.40 0.76 1.27 0.016 0.030 0.050 l1 0.95 1.05 1.15 0.037 0.041 0.045 0 4 8 0 4 8 1 0 - - 0 - - www.datasheet.net/ datasheet pdf - http://www..co.kr/
SG4953S -30v dual p-channel power mosfet ds-SG4953S-04 page: 6 silicongear corporation www. silicongear.com soldering methods for silicongear?s products 1. storage environment: temperature=10c to 35c humidity=65%15% 2. reflow soldering of surface-mount devices profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) <3c/sec <3c/sec preheat - temperature min (ts min ) - temperature max (ts max ) - time (min to max) (ts) 100c 150c 60 to 120 sec 150c 200c 60 to 180 sec tsmax to t l - ramp-up rate <3c/sec <3c/sec time maintained above: - temperature (t l ) - time (t l ) 183c 60 to 150 sec 217c 60 to 150 sec peak temperature (t p ) 240c +0/-5c 260c +0/-5c time within 5c of actual peak temperature (t p ) 10 to 30 sec 20 to 40 sec ramp-down rate <6 c/sec <6c/sec time 25c to peak temperat ure <6 minutes <8 minutes 3. flow (wave) soldering (solder dipping) products peak temperature dipping time pb devices. 245c 5c 5sec 1sec pb-free devices. 260c +0/-5c 5sec 1sec figure 1: temperature profile t p t l ramp-down ramp-up ts max ts min critical zone t l to t p t s preheat t l t p 25 t 25 o c to peak time temperature www.datasheet.net/ datasheet pdf - http://www..co.kr/
SG4953S -30v dual p-channel power mosfet ds-SG4953S-04 page: 7 silicongear corporation www. silicongear.com important notice ? silicongear corporation all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. silicongear cannot assume responsibility for use of any circui try other than circuitry entirel y embodied in an silicongear product. no circuit patent licenses, copyrights, mask work ri ghts, or other intellectual property rights are implied. silicongear corporation, its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?silicongear?), disclaim any and all liability for any errors, inaccu racies or incompleteness contained in any datasheet or in any other disclosure relating to any product. silicongear makes no warranty, representation or guarantee r egarding the suitability of t he products for any particular purpose or the continuing produc tion of any product. to the maximum ext ent permitted by applic able law, silicongear disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequentia l or incidental damages, and (iii) any and all implied warr anties, including warranties of fitness for particular pur pose, non-infringement and merchantability. statements regarding the su itability of products for certai n types of applications are bas ed on silicongear?s knowledge of typical requirements that ar e often placed on silicongear products in gener ic applications. such statements are not binding statements about the suitability of pr oducts for a particular application. it is the customer?s responsibility to validate that a particular product with the properties described in the product specific ation is suitable for use in a particul ar application. parameters provided in datas heets and/or specifications may vary in different applications and performance may vary over time. all operating parameters, including typical parameters, must be validated for each customer application by the customer?s technical experts. product spec ifications do not expand or other wise modify silicongear?s terms and conditions of purchase, including but not limited to the warrant y expressed therein. except as expressly indicated in writing, silicongear pr oducts are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the silicongear product could result in personal injury or death. cust omers using or selling silicongear products not expressly indicated for use in such applications do so at their own risk an d agree to fully indemnify and hold silicongear and its distributors harmless from and against any and all claims, liabilities, expenses and damages ar ising or resulting in connec tion with such use or sale, including attorneys fees, even if such claim alleges that silic ongear or its distributor was negligent regarding the design or manufacture of the part. please contac t authorized silicongear personnel to obtai n written terms and conditions regarding products designed for such applications. no license, express or implied, by est oppel or otherwise, to any intellectual proper ty rights is granted by this document or by any conduct of silicongear. product names and markings noted herein may be trademarks of their respective owners. silicongear and the silicongear logo are trademarks of silicong ear corporation. all ot her brand and product names appearing in this document are registered trademar ks or trademarks of t heir respective holders. www.datasheet.net/ datasheet pdf - http://www..co.kr/
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